HHD <Hybrid hard disk>

Full spelling: Hybrid Hard Disk
Alias:
Hybrid HD
Field:
Storage > hard disk > HHD

The Samson electron and the Microsoft corporation developed jointly, flash memory and the external memory unit which combines with the hard disk (HDD). It is the Advanced Capability of Windows Vista, acceleration of the starting OS and the application software and decrease of the electric power consumption of HDD are actualized with “Windows ReadyDrive” technology.

Capacity with 128 - 256MB, reads to flash memory, and speed 108MB/s, entry speed 18MB/s and high-speed operation are possible, “OneNAND” flash memory of the Samson electron is adopted. Starting processing of the software by the fact that it does in the flash memory whose high-speed operation is possible, these accelerations are actualized. When on hard disk side at the time and the like of data migration (backup) from flash memory being necessary only, it turns, other than that by the fact that revolution is made to stop, it can hold down electric power consumption.

Hibernate

Reading: [haibaneto]
Field:
Software > database > Hibernate
Programming > object oriented > Hibernate
Programming > Java > Hibernate

The tool in order to do O/R mapping with Java language (O/R [matsupa]) one. With the open source software which the programmer group which centers Gavin King developed, anyone procuring freely on the basis of the LGPL license, it is possible to utilize.

By Hibernate, object and the relational database which are defined in the program of Java language (RDB) relation attaching the table and the record above, it is possible to manage monistically.
Hibernate, when definition of each item of object and the item to which the record corresponds is described to the mapping file of XML type, forms the poult type of the cord/code for retaining and the call the object automatically.

HID <Human interface device>

Reading: H eye D
Full spelling: Human Interface Device
Field:
Personal computer > input device > HID

The equipment because, human such as mouse and keyboard approaches the computer. Input device.
With USB, the HID class which displays the input device as one of the device classes which display the type of equipment is stipulated, HID profile is stipulated as a profile in order the radio to connect the keyboard and the mouse even in Bluetooth.

HiFD

Reading: High f D
Full spelling: High capacity Floppy Disk
Field:
Storage > removable > HiFD

The information system which handles with the data which it is related to the position of the map
Standard of the bulk floppy disk which SONY and the Fuji film developed jointly. Also data rate being maximum with 1 with the capacity of 200MB, compared to 3.6MB/s and the former floppy disk at high speed bulk. Higher rank of the former 3.5 inch floppy we have become interchangeable, reading and writing of the former floppy can do with HiFD drive.

High-k <High permittivity gate insulator film>

Reading: High k
Field:
Semiconductor > basis technology > High-k

At one of types “of gate insulator film” of transistor, those which used the material of high permittivity.

Until recently, silicon dioxide (SiO2) was used for the gate insulator film of the transistor, but as refinement integration advances, thickness of that membrane becomes thin to atomic several amounts, transmitting the insulator film with the quantum tunnel effect, the leak electric current which flows out increases, has become the shape which confines integration.

In order to solve this problem, as for the Intel corporation as “there was a thickness, it developed the “High-k gate insulator film” the high permittivity which at the same time can let flow mass electric current a material”. This is something which makes the leak electric current decrease due to the quantum tunnel effect by acquiring thickness to the insulator film. In addition, those of high permittivity were adopted in order to enlarge the electric current quantity of the transistor. With the data of the same company, when High-k is adopted, past compared to 60% it raised induced electricity capacity, leakage current of the gate became 1/100.